For industrial products like SEMIX 202GB12T4S IGBT Module, Trench, Half-Bridge, 1200 V, 314 A Max., SEMiX 2s from Semikron, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as SEMIX 202GB12T4S part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.
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Product Attribute of SEMIX 202GB12T4S | |
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Channel Type | N |
Collector Current | 314 A |
Collector to Emitter Shorted Voltage | 1200 V |
Collector to Emitter Voltage | 1200 V |
Configuration | Dual |
Continuous Collector Current | 314 A |
Dimensions | 116.5 x 61.5 x 17 mm |
Energy Rating | 43 mJ |
Gate Capacitance | 12.3 nF |
Gate to Emitter Voltage | 20 V |
Height | 0.669" (17mm) |
Length | 4.586" (116.5mm) |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -40 C |
Mounting Type | Screw |
Number of Pins | 16 |
Package Type | SEMIX 2s |
Polarity | N-Channel |
Primary Type | Si |
Product Header | Trench N-Channel IGBT Module |
Resistance, Thermal, Junction to Case | 0.14 K/W |
Series | IGBT Series |
Temperature Operating Range | -40 to +175 C |
Type | Trench |
Width | 2.421" (61.5mm) |
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