Quote for IRF7905PBF Part by Infineon - Electronics And Automation Parts

For industrial products like IRF7905PBF MOSFET, Power,N-Ch,VDSS 30V,ID 7.8 A (Control FET), 8.9 A (Synchronous FET from Infineon, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as IRF7905PBF part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.

Part Number:IRF7905PBF
Manufacturer: Infineon
Description : MOSFET, Power,N-Ch,VDSS 30V,ID 7.8 A (Control FET), 8.9 A (Synchronous FET

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Product Attribute of IRF7905PBF
Channel Type N
Configuration Dual Drain
Dimensions 5.00 x 4.00 x 1.50 mm
Drain Current 7.8 (Q1), 8.9 (Q2) A
Drain to Source On Resistance 21.3 (Q2), 29.3 (Q1) m
Drain to Source Voltage 30 V
Forward Transconductance 15 (Q1), 18 (Q2) S
Forward Voltage, Diode 1 V
Gate to Source Voltage 20 V
Height 0.059" (1.5mm)
Input Capacitance 600 pF @ 15 V (Q1), 910 pF @ 15 V (Q2)
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Type Surface Mount
Number of Elements per Chip 2
Number of Pins 8
Package Type SO-8
Polarization N-Channel
Power Dissipation 2 (Q1), 2 (Q2) W
Product Header Hexfet Power MOSFET
Resistance, Thermal, Junction to Case 90/62.5 Q1/Q2 DegC/W
Series HEXFET Series
Total Gate Charge 4.6 nC (Control FET), 6.9 nC (Synchronous FET)
Turn Off Delay Time 6.9 (Q1), 8.1 (Q2) ns
Turn On Delay Time 5.2 (Q1), 6.2 (Q2) ns
Typical Gate Charge @ Vgs 4.6 nC @ 4.5 V (Q1), 6.9 nC @ 4.5 V (Q2)
Voltage, Breakdown, Drain to Source 30 V
Width 0.157" (4mm)
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