Quote for IRF7822PBF Part by Infineon - Electronics And Automation Parts

For industrial products like IRF7822PBF MOSFET, Power,N-Ch,VDSS 30V,RDS(ON) 5 Milliohms,ID 18A,SO-8,PD 3.1W,VGS +/-12V from Infineon, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as IRF7822PBF part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.

Part Number:IRF7822PBF
Manufacturer: Infineon
Description : MOSFET, Power,N-Ch,VDSS 30V,RDS(ON) 5 Milliohms,ID 18A,SO-8,PD 3.1W,VGS +/-12V

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Product Attribute of IRF7822PBF
Channel Type N
Configuration Quad Drain, Triple Source
Dimensions 5.00 x 4.00 x 1.50 mm
Drain Current 18 A
Drain to Source On Resistance 6.5 m
Drain to Source Voltage 30 V
Forward Voltage, Diode 1 V
Gate to Source Voltage 12 V
Height 0.059" (1.5mm)
Input Capacitance 5500 pF @ 16 V
Length 0.196" (5mm)
Minimum Operating Temperature -55 C
Mounting Type Surface Mount
Number of Elements per Chip 1
Number of Pins 8
Package Type SO-8
Polarization N-Channel
Power Dissipation 3.1 W
Product Header Hexfet Power MOSFET
Series HEXFET Series
Temperature Operating Range -55 to +150 C
Total Gate Charge 44 nC (Control FET), 38 nC (Synchronous FET)
Turn On Delay Time 15 ns
Typical Gate Charge @ Vgs 44 nC @ 5 V
Voltage, Breakdown, Drain to Source 30 V
Width 0.157" (4mm)
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