For industrial products like IRF4905SPBF Power MOSFET,P-Ch,VDSS -55V,RDS(ON) 20 Milliohms,ID -70A,D2Pak,PD 170W,VGS+/-20V from Infineon, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as IRF4905SPBF part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.
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Product Attribute of IRF4905SPBF | |
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Channel Type | P |
Configuration | Dual Drain |
Dimensions | 10.67 x 9.65 x 4.83 mm |
Drain Current | -70 A |
Drain to Source On Resistance | 20 mO |
Drain to Source Voltage | -55 V |
Forward Transconductance | 19 sec |
Forward Voltage, Diode | -1.3 V |
Gate to Source Voltage | ±20 V |
Height | 0.19" (4.83mm) |
Input Capacitance | 3500 pF @ 25 V |
Length | 0.42" (10.67mm) |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Package Type | D2PAK |
Polarization | P-Channel |
Power Dissipation | 170 W |
Product Header | Hexfet® Power MOSFET |
Series | HEXFET Series |
Temperature Operating Range | -55 to +150 °C |
Total Gate Charge | 120 nC |
Turn Off Delay Time | 51 ns |
Turn On Delay Time | 20 ns |
Typical Gate Charge @ Vgs | 120 nC @ -10 V |
Voltage, Breakdown, Drain to Source | -55 V |
Width | 0.38" (9.65mm) |
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