For industrial products like IRFBC40APBF MOSFET, Power,N-Ch,VDSS 600V,RDS(ON) 1.2 Ohms,ID 6.2A,TO-220AB,PD 125W,VGS+/-30V from Vishay Pcs, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as IRFBC40APBF part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.
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Product Attribute of IRFBC40APBF | |
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Channel Type | N |
Configuration | Single |
Dimensions | 10.51 x 4.65 x 15.49 mm |
Drain Current | 6.2 A |
Drain to Source On Resistance | 1.2 O |
Drain to Source Voltage | 600 V |
Forward Transconductance | 3.4 S |
Forward Voltage, Diode | 1.5 V |
Gate to Source Voltage | 30 V |
Height | 0.61" (15.49mm) |
Input Capacitance | 1036 pF @ 25 V |
Length | 0.413" (10.51mm) |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Package Type | TO-220AB |
Polarization | N-Channel |
Power Dissipation | 125 W |
Product Header | Hexfet Power MOSFET |
Series | IRF Series |
Temperature Operating Range | -55 to +150 C |
Total Gate Charge | 42 nC |
Turn Off Delay Time | 31 ns |
Turn On Delay Time | 13 ns |
Typical Gate Charge @ Vgs | Maximum of 42 nC @ 10 V |
Voltage, Breakdown, Drain to Source | 600 V |
Width | 0.183" (4.65mm) |
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