Quote for SUM110N06-3M9H-E3 Part by Siliconix Vishay - Electronic Components Parts

For industrial products like SUM110N06-3M9H-E3 MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.00325Ohm,ID 110A,TO-263,PD 375W,VGS +/-20V from Siliconix Vishay, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as SUM110N06-3M9H-E3 part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.

Part Number:SUM110N06-3M9H-E3
Manufacturer: Siliconix Vishay
Description : MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.00325Ohm,ID 110A,TO-263,PD 375W,VGS +/-20V

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Product Attribute of SUM110N06-3M9H-E3
Application Automotive such as high-side switch, motor drives, 12 V battery
Channel Type N
Configuration Single
Dimensions 10.414 x 9.652 x 4.826 mm
Drain Current 110 A
Drain to Source On Resistance 0.0082 O
Drain to Source Voltage 60 V
Fall Time 14 nS
Forward Transconductance 30 S
Forward Voltage, Diode 1.1 V
Junction to Ambient Thermal Resistance 40 C/W
Length 0.41" (10.414mm)
Maximum Operating Temperature +175 C
Minimum Operating Temperature -55 C
Mounting Type Surface Mount
Number of Elements per Chip 1
Number of Pins 3
Operating and Storage Temperature -55 to +175 C
Package Type TO-263
Polarization N-Channel
Power Dissipation 375 W
Product Header TrenchFET Power MOSFET
Resistance, Thermal, Junction to Case 0.4 C/W
Series SUM Series
Total Gate Charge 200 nC
Turn Off Delay Time 75 ns
Turn On Delay Time 45 ns
Typical Gate Charge @ Vgs 200 nC @ 10 V
Voltage, Breakdown, Drain to Source 60 V
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