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Quote for SI6463BDQ-T1-E3 BKN Part by Siliconix Vishay - Electronic Components Parts
For industrial products like SI6463BDQ-T1-E3 BKN P-CH MOSFET TSSOP-8 20V 15MOHM @ 4.5V from Siliconix Vishay, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as SI6463BDQ-T1-E3 BKN part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.
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| Product Attribute of SI6463BDQ-T1-E3 BKN | |
|---|---|
| Channel Type | P |
| Configuration | Dual Drain, Dual Gate, Quad |
| Dimensions | 4.5 x 3.1 x 1.05 mm |
| Drain Current | -4.9 A |
| Drain to Source On Resistance | 0.015 |
| Drain to Source Voltage | -20 V |
| Fall Time | 150 ns |
| Forward Transconductance | 34 S |
| Forward Voltage, Diode | -1.1 V |
| Gate to Source Voltage | 8 V |
| Height | 0.041" (1.05mm) |
| Length | 0.177" (4.5mm) |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Number of Pins | 8 |
| Operating and Storage Temperature | -55 to +150 C |
| Package Type | TSSOP |
| Polarization | P-Channel |
| Power Dissipation | 1.05 W |
| Series | SI64 Series |
| Total Gate Charge | 60 nC |
| Turn Off Delay Time | 300 ns |
| Turn On Delay Time | 55 ns |
| Typical Gate Charge @ Vgs | 40 nC @ -10 V |
| Voltage, Breakdown, Drain to Source | -20 V |
| Width | 0.122" (3.1mm) |
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