For industrial products like 2N7002K-T1-E3 MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 2 Ohms,ID 300mA,TO-236 (SOT-23),PD 0.35W from Siliconix Vishay, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as 2N7002K-T1-E3 part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.
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Product Attribute of 2N7002K-T1-E3 | |
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Channel Type | N |
Configuration | Single |
Dimensions | 3.04 x 1.4 x 1.02 mm |
Drain Current | 300 mA |
Drain to Source On Resistance | 4 O |
Drain to Source Voltage | 60 V |
Forward Transconductance | 100 mS |
Forward Voltage, Diode | 1.3 V |
Gate to Source Voltage | 20 V |
Height | 0.04" (1.02mm) |
Input Capacitance | 30 pF @ 25 V |
Length | 0.119" (3.04mm) |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Operating and Storage Temperature | 55 to +150 C |
Package Type | TO-236 |
Polarization | N-Channel |
Power Dissipation | 0.35 W |
Product Header | TrenchFET Power MOSFET |
Series | 2N7002 Series |
Temperature Operating Range | -55 to +150 C |
Total Gate Charge | 0.4 nC |
Turn Off Delay Time | 35 ns |
Turn On Delay Time | 25 ns |
Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
Voltage, Breakdown, Drain to Source | 60 V |
Width | 0.055" (1.4mm) |
Industrial Supply Parts Related to 2N7002K-T1-E3 | |
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2N7002E-7-F | 2N7002WT1G | 2N7000-G | 2N7002L | 2N7002-T1-E3 | 2N7002-7-F | 2N7002-E3 | 2N7002E-T1-E3 | 2N7002DW-7-F | 2N7002K-7 | 2N7002W-7-F | 2N7002KT1G | 2N7008-G | 2N7002-G | 2N7002T-7-F | 2N7002A-7 | 2N7002K-T1-GE3 |
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