For industrial products like SEMIX503GD126HDC IGBT, 1200 V, 490 A @ 25 DegC, 480 A @ 80 DegC, 1.7 V @ 25 degC from Semikron, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as SEMIX503GD126HDC part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.
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Product Attribute of SEMIX503GD126HDC | |
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Channel Type | N |
Collector Current | 466 A |
Collector to Emitter Shorted Voltage | 1200 V |
Configuration | Array |
Continuous Collector Current | 466 A |
Dimensions | 149.5 x 163 x 17 mm |
Energy Rating | 72 mJ |
Gate Capacitance | 21.6 nF |
Gate to Emitter Voltage | 20 V |
Length | 5.885" (149.5mm) |
Minimum Operating Temperature | -40 C |
Mounting Type | Screw |
Number of Pins | 29 |
Package Type | SEMIX 33c |
Polarity | N-Channel |
Primary Type | Si |
Product Header | Trench N-Channel IGBT Module |
Resistance, Thermal, Junction to Case | 0.08 K/W |
Series | IGBT Series |
Temperature Operating Range | -40 to +150 C |
Transistor Type | IGBT |
Type | Trench |
Voltage, Collector to Emitter, Saturation | 1.7 V |
Voltage, Saturation, Collector to Emitter | 1.7 V @ 25 C (Typ.) |
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