For industrial products like IRFS3107PBF IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK from Infineon, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as IRFS3107PBF part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.
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Product Attribute of IRFS3107PBF | |
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Application | High Efficiency Synchronous Rectification in SMPS; Uninterruptible Power Supply; High Speed Power Switching; Hard Switched and High Frequency Circuits |
Channel Type | N |
Configuration | Dual Drain |
Dimensions | 10.67 x 9.65 x 4.83 mm |
Drain Current | 230 A |
Drain to Source On Resistance | 2.5 Milliohms |
Drain to Source Voltage | 75 V |
Fall Time | 100 ns |
Forward Transconductance | 230 S |
Forward Voltage, Diode | 1.3 V |
Gate to Source Voltage | 20 V |
Input Capacitance | 9370 pF @ 50 V |
Junction to Ambient Thermal Resistance | 40 C/W |
Length | 0.42" (10.67mm) |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | 55 C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Number of Pins | 3 |
Package Type | D2PAK |
Power Dissipation | 370 W |
Resistance, Thermal, Junction to Case | 0.4 C/W |
Series | HEXFET Series |
Temperature Operating Range | -55 to +175 C |
Turn Off Delay Time | 99 ns |
Turn On Delay Time | 19 ns |
Typical Gate Charge @ Vgs | 160 nC @ 10 V |
Width | 0.38" (9.65mm) |
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