Quote for IRFB4610PBF Part by Infineon - Electronic Components Parts

For industrial products like IRFB4610PBF MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 11 Milliohms,ID 73A,TO-220AB,PD 190W,-55C from Infineon, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as IRFB4610PBF part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.

Part Number:IRFB4610PBF
Manufacturer: Infineon
Description : MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 11 Milliohms,ID 73A,TO-220AB,PD 190W,-55C

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Product Attribute of IRFB4610PBF
Application High efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching and hard switched and high frequency circuits and lead-free
Channel Type N
Configuration Single
Dimensions 10.66 x 4.82 x 9.02 mm
Drain Current 73 A
Drain to Source On Resistance 14 m
Drain to Source Voltage 100 V
Fall Time 70 ns (Typ.)
Forward Transconductance 73 S
Forward Voltage, Diode 1.3 V
Gate to Source Voltage 20 V
Input Capacitance 3550 pF @ 50 V
Junction to Ambient Thermal Resistance 62 C W
Length 0.419" (10.66mm)
Maximum Operating Temperature +175 C
Minimum Operating Temperature -55 C
Mounting Type Through Hole
Number of Elements per Chip 1
Number of Pins 3
Operating and Storage Temperature -55 to +175 C (Max.)
Package Type TO-220AB
Polarization N-Channel
Product Header Hexfet Power MOSFET
Resistance, Thermal, Junction to Case 0.77 C/W (Max.)
Series HEXFET Series
Temperature Operating Range -55 to +175 C
Total Gate Charge 90 nC
Turn Off Delay Time 53 ns
Turn On Delay Time 18 ns
Typical Gate Charge @ Vgs 90 nC @ 10 V
Voltage, Breakdown, Drain to Source 100 V
Width 0.19" (4.82mm)
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