Quote for IRF7319TRPBF Part by Infineon - Electronic Components Parts

For industrial products like IRF7319TRPBF IRF7319TRPBF Dual N/P-channel MOSFET Transistor; 4.9 A; 6.5 A; 30 V; 8-Pin SOIC from Infineon, look no further than Infinite Industrials, an all-inclusive marketplace for industrial and automation products. Owned and operated by ASAP Semiconductor, we have access to an inventory of more than 2 billion new and obsolete parts such as IRF7319TRPBF part and others from many unique part categories. Furthermore, any parts not in our possession can be quickly tracked down and sourced through our extensive international supply chain network that spans the United States, Canada, and the United Kingdom.

Part Number:IRF7319TRPBF

Manufacturer: Infineon

Category: Electronic Components

Sub Category: Discrete Semiconductors

Description : IRF7319TRPBF Dual N/P-channel MOSFET Transistor; 4.9 A; 6.5 A; 30 V; 8-Pin SOIC

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Product Attribute of IRF7319TRPBF
Channel Type	N, P
Configuration	Dual Source, Quad Drain
Dimensions	5.00 x 4.00 x 1.50 mm
Drain Current	-4.9 (P), 6.5 (N) A
Drain to Source On Resistance	0.046 (N), 0.098 (P)
Drain to Source Voltage	-30 (P), 30 (N) V
Forward Transconductance	14 (N), 7.7 (P) S
Forward Voltage, Diode	0.78/-0.78 V
Gate to Source Voltage	20 V
Height	0.059" (1.5mm)
Input Capacitance	650 pF @ 25 V (N), 710 pF @ -25 V (P)
Length	0.196" (5mm)
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Operating Temperature	-55 to 150 C
Package Type	SO-8
Polarization	N-Channel and P-Channel
Power Dissipation	2 W
Series	HEXFET Series
Total Gate Charge	22/23 nC
Turn Off Delay Time	26 (N), 34 (P) ns
Turn On Delay Time	13 (P), 8.1 (N) ns
Typical Gate Charge @ Vgs	22 nC @ 10 V (N), 23 nC @ -10 V (P)
Voltage, Breakdown, Drain to Source	30/-30 V
Width	0.157" (4mm)

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